document number: 81017 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 16-sep-08 147 infrared emitting diode, rohs compliant, 875 nm, gaalas TSHA4400, tsha4401 vishay semiconductors description the tsha440. series are infrar ed, 875 nm emitting diodes in gaalas technology, molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1 ? dimensions (in mm): ? 3 ? peak wavelength: p = 875 nm ? high reliability ? angle of half intensity: ? = 20 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? infrared remote control and free air data transmission systems with comfort able radiation angle ? this emitter series is ded icated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 636 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSHA4400 20 20 875 600 tsha4401 30 20 875 600 ordering information ordering code packaging remarks package form TSHA4400 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 tsha4401 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2a power dissipation p v 180 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm, soldered on pcb r thja 300 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81017 148 rev. 1.6, 16-sep-08 TSHA4400, tsha4401 vishay semiconductors infrared emitting diode, rohs compliant, 875 nm, gaalas fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 200 010203040506070 8 0 90 100 21311 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 300 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21312 i f - for w ard c u rrent (ma) r thja = 300 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v i f = 1.5 a, t p = 100 s v f 3.2 4.9 v temperature coefficient of v f i f = 100 ma tk vf - 1.6 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf temperature coefficient of e i f = 100 ma tk e - 0.7 %/k angle of half intensity ? 20 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma ? 80 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 600 ns i f = 1.5 a t r 300 ns fall time i f = 100 ma t f 600 ns i f = 1.5 a t f 300 ns virtual source diameter d 1.8 mm type dedicated characteristics parameter test condition part symbol min. typ. max. unit radiant intensity i f = 100 ma, t p = 20 ms TSHA4400 i e 12 20 60 mw/sr tsha4401 i e 16 30 60 mw/sr i f = 1.5 ma, t p = 100 s TSHA4400 i e 140 240 mw/sr tsha4401 i e 190 360 mw/sr radiant power i f = 100 ma, t p = 20 ms TSHA4400 e 20 mw tsha4401 e 24 mw
document number: 81017 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 16-sep-08 149 TSHA4400, tsha4401 infrared emitting diode, rohs compliant, 875 nm, gaalas vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intensity/power vs. ambient temperature t p - p u lse d u ration (ms) 94 7947 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t = 0.01, i fm =2a 0.05 0.1 0.5 0.02 0.2 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) 94 8 005 10 1 10 2 10 3 10 4 t p = 100 s t p /t= 0.001 4 3 2 1 0 i - for w ard c u rrent (ma) f 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 7942 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i - radiant intensity (m w /sr) e tsha 4401 tsha 4400 - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 7943 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i ; e rel e rel 140 94 8 020 i f = 20 ma t am b - am b ient temperat u re (c)
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81017 150 rev. 1.6, 16-sep-08 TSHA4400, tsha4401 vishay semiconductors infrared emitting diode, rohs compliant, 875 nm, gaalas fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement package dimensions in millimeters 7 8 0 88 0 - w a v elenght (nm) 9 8 0 94 8 000 - relati v e radiant po w er e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma p e e e )/ () ( ) rel = ( 900 950 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 1000 94 7994 e rel - relati v e radiant po w er i f = 100 ma 3.2 0.15 2.9 0.1 0.4 + 0.15 - 0.05 < 0.6 3.5 0.1 4.5 0.3 5. 8 0.3 30.3 0.5 1.5 0.25 0.6 0.15 2.54 nom. dra w ing- n o.: 6.544-5264.01-4 iss u e: 2; 23.04.9 8 specifications according to di n technical dra w ings a c area not plane (2.5) r 1.4 (sphere) 95 10951
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